검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Improved modeling on the RF behavior of InAs/AlSb HEMTs Guan H, Lv HL, Zhang YM, Zhang YM Solid-State Electronics, 114, 155, 2015 |
| 2 |
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 79, 268, 2013 |
| 3 |
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation Moschetti G, Lefebvre E, Fagerlind M, Nilsson PA, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 87, 85, 2013 |
| 4 |
Time-dependent device characteristics in InAs/AlSb HEMTs Ho HC, Liu HK, He WZ, Lin HK, Hsin YM Solid-State Electronics, 73, 51, 2012 |
| 5 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J Solid-State Electronics, 64(1), 47, 2011 |
| 6 |
Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors Lin HK, Lin YC, Huang FH, Fan TW, Chiu PC, Chyi JI, Ko CH, Kuan TM, Hsieh MK, Lee WC, Wann CH Solid-State Electronics, 54(4), 475, 2010 |
| 7 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |
| 8 |
Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates Ohtani K, Sato A, Ohno Y, Matsukura F, Ohno H Applied Surface Science, 159, 313, 2000 |
| 9 |
Characterization of AlSb/InAs surfaces and resonant tunneling devices Nosho BZ, Weinberg WH, Barvosa-Carter W, Bracker AS, Magno R, Bennett BR, Culbertson JC, Shanabrook BV, Whitman LJ Journal of Vacuum Science & Technology B, 17(4), 1786, 1999 |
| 10 |
Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers Harper J, Weimer M, Zhang D, Lin CH, Pei SS Journal of Vacuum Science & Technology B, 16(3), 1389, 1998 |