| 1 |
Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell
Yoon S, Lee SH, Shin JC, Kim JS, Lee SJ, Leem JY, Krishna S
Current Applied Physics, 18(6), 667, 2018 |
| 2 |
Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell
Yoon S, Lee SH, Shin JC, Kim JS, Lee SJ, Leem JY, Krishna S
Current Applied Physics, 18(6), 667, 2018 |
| 3 |
Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1-xAs/GaAs modulation-doped heterostructures
Im HC, Kim JH, Oh DH, Kim TW, Yoo KH, Kim MD
Applied Surface Science, 252(12), 4146, 2006 |
| 4 |
Normal-incidence far-infrared detectivity of InAs/GaAs QDIPs doped in dots and barriers
Lee SJ, Noh SK, Hong SC, Lee JI
Current Applied Physics, 6(1), 37, 2006 |
| 5 |
Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy
Kim HS, Suh JH, Park CG, Lee SJ, Noh SK, Song JD, Park YJ, Choi WJ, Lee JI
Journal of Crystal Growth, 285(1-2), 137, 2005 |
| 6 |
Difference of anisotropic structures of InAs/GaAs quantum dots between organometallic vapor-phase epitaxy and molecular beam epitaxy
Furukawa Y, Noda S
Journal of Crystal Growth, 220(4), 425, 2000 |
| 7 |
Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy
Hahn CK, Motohisa J, Fukui T
Journal of Crystal Growth, 221, 599, 2000 |
