검색결과 : 193건
| No. | Article |
|---|---|
| 1 |
Analysis of a novel photovoltaic/thermal system using InGaN/GaN MQWs cells in high temperature applications Ren X, Li J, Gao DT, Wu LJ, Pei G Renewable Energy, 168, 11, 2021 |
| 2 |
Rational design and fabrication of surface tailored low dimensional Indium Gallium Nitride for photoelectrochemical water cleavage Ganesh V, Pandikumar A, Alizadeh M, Kalidoss R, Baskar K International Journal of Hydrogen Energy, 45(15), 8198, 2020 |
| 3 |
Cu2O/InGaN heterojunction thin films with enhanced photoelectrochemical activity for solar water splitting Alizadeh M, Tong GB, Qadir KW, Mehmood MS, Rasuli R Renewable Energy, 156, 602, 2020 |
| 4 |
Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications Prabakaran K, Jayasakthi M, Surender S, Pradeep S, Sanjay S, Ramesh R, Balaji M, Gautier N, Baskar K Applied Surface Science, 476, 993, 2019 |
| 5 |
Reduction of nonradiative recombination in InGaN epilayers grown with periodical dilute hydrogen carrier gas Wang HL, Lv ZS, Chen C, Zhang SP, Guo Y, Li B, Wu ZS, Jiang H Applied Surface Science, 494, 285, 2019 |
| 6 |
Unassisted water splitting with 9.3% efficiency by a single quantum nanostructure photoelectrode Alvi NU, Rodriguez PEDS, ul Hassan W, Zhou GF, Willander M, Notzel R International Journal of Hydrogen Energy, 44(36), 19650, 2019 |
| 7 |
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Dominec F, Hospodkova A, Hubacek T, Zikova M, Pangrac J, Kuldova K, Vetushka A, Hulicius E Journal of Crystal Growth, 507, 246, 2019 |
| 8 |
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C Journal of Crystal Growth, 506, 8, 2019 |
| 9 |
Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW Abdelhamid M, Reynolds JG, El-Masry NA, Bedair SM Journal of Crystal Growth, 520, 18, 2019 |
| 10 |
Surface passivation of InGaN nanorods using H3PO4 treatment for enhanced photoelectrochemical performance Xu ZZ, Zhang SG, Liang JH, Lin J, Yu YF, Li RZ, Gao FL, Li GQ Journal of Power Sources, 419, 65, 2019 |