| 1 |
Degradation of up-grown metamorphic InGaP/InGaAs/Ge solar cells by low-energy proton irradiation
Guo HL, Shi LF, Sun Q, Zhang QM, Wu YY, Xiao JD, Guo B, Zhang YQ
Solar Energy Materials and Solar Cells, 191, 399, 2019 |
| 2 |
InGaP/InGaAs field-effect transistor typed hydrogen sensor
Tsai JH, Liou SH, Lin PS, Chen YC
Applied Surface Science, 432, 224, 2018 |
| 3 |
Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs
Tsai JH, Li CM
Solid-State Electronics, 52(1), 146, 2008 |
| 4 |
Electrical properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure
Tsai JH, Zhu KP
Materials Chemistry and Physics, 82(3), 501, 2003 |
| 5 |
In0.5Ga0.5P/In0.22Ga0.78As pseudomorphic high electron mobility transistors with an oxidized GaAs gate for improved breakdown voltage characteristics
Lee JW, Kang IH, Kang SJ, Jo SJ, In SK, Song HJ, Song JI
Solid-State Electronics, 47(2), 223, 2003 |
| 6 |
Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor
Kim JH, Song JI
Solid-State Electronics, 45(9), 1571, 2001 |
