검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
The influence of InGaP barrier layer on the characteristics of 1.3 mu m strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes Lee CY, Jiang WJ, Wu MC, Ho WJ Solid-State Electronics, 46(9), 1389, 2002 |
| No. | Article |
|---|---|
| 1 |
The influence of InGaP barrier layer on the characteristics of 1.3 mu m strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes Lee CY, Jiang WJ, Wu MC, Ho WJ Solid-State Electronics, 46(9), 1389, 2002 |