| 1 |
Improvement of electrical characteristics of InGaZnO thin film transistors by using HMDSO/O-2 plasma deposited SiOCH buffer layer
Liu C, Qin HY, Liu YM, Wei S, Wang HB, Zhao Y
Current Applied Physics, 21, 170, 2021 |
| 2 |
X-ray photoelectron spectroscopy analysis of the effect of photoresist passivation on InGaZnO thin-film transistors
Xiao P, Huang JH, Dong T, Yuan J, Yan D, Xie JN, Tan HS
Applied Surface Science, 471, 403, 2019 |
| 3 |
Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience
Dong CY, Xu JN, Zhou Y, Zhang Y, Xie HT
Solid-State Electronics, 153, 74, 2019 |
| 4 |
Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits
Cho HJ, Lee DH, Park EK, Kim MS, Lee SY, Park K, Choe H, Jeon JH, Kim YS
Thin Solid Films, 673, 14, 2019 |
| 5 |
A drain current model for amorphous InGaZnO thin film transistors considering temperature effects
Cai MX, Yao RH
Solid-State Electronics, 141, 23, 2018 |
| 6 |
InGaZnO 박막 트랜지스터의 전기 및 광학적 특성에 대한 전자빔 조사의 영향
조인환, 박해응, 김찬증, 전병혁
Korean Journal of Materials Research, 27(6), 345, 2017 |
| 7 |
A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime
Yu F, Ma XY, Deng WL, Liou JJ, Huang JK
Solid-State Electronics, 137, 38, 2017 |
| 8 |
Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers
Xie HT, Wu Q, Xu L, Zhang L, Liu GC, Dong CY
Applied Surface Science, 387, 237, 2016 |
| 9 |
Ambient effect on thermal stability of amorphous InGaZnO thin film transistors
Xu JE, Wu Q, Xu L, Xie HT, Liu GC, Zhang L, Dong CY
Solid-State Electronics, 126, 170, 2016 |
| 10 |
High-Performance, Mechanically Flexible, and Vertically Integrated 3D Carbon Nanotube and InGaZnO Complementary Circuits with a Temperature Sensor
Honda W, Harada S, Ishida S, Arie T, Akita S, Takei K
Advanced Materials, 27(32), 4674, 2015 |
