| 1 |
Improvement of electrical characteristics of InGaZnO thin film transistors by using HMDSO/O-2 plasma deposited SiOCH buffer layer
Liu C, Qin HY, Liu YM, Wei S, Wang HB, Zhao Y
Current Applied Physics, 21, 170, 2021 |
| 2 |
Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience
Dong CY, Xu JN, Zhou Y, Zhang Y, Xie HT
Solid-State Electronics, 153, 74, 2019 |
| 3 |
Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors
Kim JS, Joo MK, Piao MX, Ahn SE, Choi YH, Na J, Shin M, Han MJ, Jang HK, Kim GT
Thin Solid Films, 558, 279, 2014 |
| 4 |
Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature
Lee SM, Yu CG, Cho WJ, Park JT
Solid-State Electronics, 72, 88, 2012 |
| 5 |
The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors
Kim S, Kim S, Kim C, Park J, Song I, Jeon S, Ahn SE, Park JS, Jeong JK
Solid-State Electronics, 62(1), 77, 2011 |
| 6 |
Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates
Lee CY, Chang C, Shih WP, Dai CL
Thin Solid Films, 518(14), 3992, 2010 |
