| 1 |
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
Kim SB, Lee SH, Jung HJ, Seo MS, Kim SM, Lee S, Park JY, Park TJ, Jeong HY, Jun DH, Park KH, Park WK, Lee SW
Thin Solid Films, 646, 173, 2018 |
| 2 |
Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots
Kulkova IV, Lyasota A, Jarlov C, Rigal B, Rudra A, Dwir B, Kapon E
Journal of Crystal Growth, 464, 69, 2017 |
| 3 |
Defect creation in In GaAs/GaAs multiple quantum wells-I. Structural properties
Karow MM, Faleev NN, Smith DJ, Honsberg CB
Journal of Crystal Growth, 425, 43, 2015 |
| 4 |
Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties
Karow MM, Faleev NN, Maros A, Honsberg CB
Journal of Crystal Growth, 425, 49, 2015 |
| 5 |
Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs
Galiev GB, Vasilevskii IS, Klimov EA, Pushkarev SS, Klochkov AN, Maltsev PP, Presniakov MY, Trunkin IN, Vasiliev AL
Journal of Crystal Growth, 392, 11, 2014 |
| 6 |
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition
Lamperti A, Molle A, Cianci E, Wiemer C, Spiga S, Fanciulli M
Thin Solid Films, 563, 44, 2014 |
| 7 |
Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
Galiev GB, Vasil'evskii IS, Pushkarev SS, Klimov EA, Imamov RM, Buffat PA, Dwir B, Suvorova EI
Journal of Crystal Growth, 366, 55, 2013 |
| 8 |
Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance
Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC
Journal of Crystal Growth, 378, 92, 2013 |
| 9 |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
Zhang XG, Guo HX, Zhu Z, Gong X, Yeo YC
Solid-State Electronics, 84, 83, 2013 |
| 10 |
Achieving very high drain current of 1.23 mA/mu m in a 1-mu m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
Lin TD, Chang P, Wu YD, Chiu HC, Kwo J, Hong M
Journal of Crystal Growth, 323(1), 518, 2011 |
