| 1 |
Crack-free GaN-based ultraviolet multiple quantum wells structures grown on AlN/2 degrees misoriented sapphire template
Fan XM, Bai JC, Xu SR, Zhang JC, Li PX, Peng RS, Zhao Y, Du JJ, Shi XF, Hao Y
Thin Solid Films, 663, 44, 2018 |
| 2 |
Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates
Kazazis SA, Papadomanolaki E, Androulidaki M, Tsagaraki K, Kostopoulos A, Aperathitis E, Iliopoulos E
Thin Solid Films, 611, 46, 2016 |
| 3 |
Variable-Color Light-Emitting Diodes Using GaN Microdonut arrays
Tchoe Y, Jo J, Kim M, Heo J, Yoo G, Sone C, Yi GC
Advanced Materials, 26(19), 3019, 2014 |
| 4 |
Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium
Yadav BS, Mohanta P, Srinivasa RS, Major SS
Thin Solid Films, 555, 179, 2014 |
| 5 |
Growths of indium gallium nitride nanowires by plasma-assisted chemical vapor deposition
Tang WC, Hong FCN
Thin Solid Films, 570, 315, 2014 |
| 6 |
Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers
Turski H, Siekacz M, Wasilewski ZR, Sawicka M, Porowski S, Skierbiszewski C
Journal of Crystal Growth, 367, 115, 2013 |
| 7 |
Growth and stuctural characterization of InGaN layers with controlled In content prepared by plasma-assisted molecular beam epitaxy
Shin EJ, Lim SH, Jeong M, Lim DS, Han SK, Lee HS, Hong SK, Lee JY, Yao T
Thin Solid Films, 546, 42, 2013 |
| 8 |
Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate
Wan Z, He Y, Choi C, Suh E, Yu YM, Yi SN, Ahn HS, Yang M, Lee HJ, Shin K
Thin Solid Films, 546, 104, 2013 |
| 9 |
Optical absorption dependence on composition and thickness of InxGa1-xN (0.05 < x < 0.22) grown on GaN/sapphire
Jampana BR, Weiland CR, Opila RL, Ferguson IT, Honsberg CB
Thin Solid Films, 520(22), 6807, 2012 |
| 10 |
Improvement in light output intensity of InGaN/GaN multiple-quantum-well blue light-emitting diode by SiO2/Si3N4 distributed Bragg reflectors and silver back mirror
Lei PH
Thin Solid Films, 519(10), 3363, 2011 |
