검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Si 도핑이 InAs 자기조립 양자점 적외선 소자 특성에 미치는 효과 서동범, 황제환, 오보람, 김준오, 이상준, 김의태 Korean Journal of Materials Research, 29(9), 542, 2019 |
| 2 |
Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors Tian ZB, Schuler-Sandy T, Krishna S, Tang DH, Smith DJ Journal of Crystal Growth, 425, 364, 2015 |
| 3 |
Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors Nutku F, Erol A, Arikan MC, Ergun Y Applied Surface Science, 318, 95, 2014 |
| 4 |
Hybrid Organic/Inorganic Optical Up-Converter for Pixel-Less Near-Infrared Imaging Chen J, Tao JC, Ban DY, Helander MG, Wang ZB, Qiu J, Lu ZH Advanced Materials, 24(23), 3138, 2012 |
| 5 |
Thermally evaporated single-crystal Germanium on Silicon Sorianello V, Colace L, Nardone M, Assanto G Thin Solid Films, 519(22), 8037, 2011 |
| 6 |
Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy Li J, Gong Q, Li SG, Li AZ, Lin C Journal of Crystal Growth, 311(7), 1703, 2009 |
| 7 |
InGaAsP/InP long wavelength quantum well infrared photodetectors Sun L, Zhang DH, Yuan KH, Yoon SF, Radhakrishnan K Thin Solid Films, 515(10), 4450, 2007 |
| 8 |
Electrochemically self-assembled nanostructure arrays Stefanita CG, Pramanik S, Banerjee A, Sievert M, Baski AA, Bandyopadhyay S Journal of Crystal Growth, 268(3-4), 342, 2004 |
| 9 |
Spectroscopy of Intersubband Transitions in Si-Si1-xGex Quantum-Wells Boucaud P, Wu L, Julien FH, Lourtioz JM, Sagnes I, Campidelli Y, Prazeres R, Ortega JM Thin Solid Films, 294(1-2), 173, 1997 |
| 10 |
Ir Studies of P-Type Si/SiGe Quantum-Wells - Intersubband Absorption, Ir Detectors, and 2nd-Harmonic Generation Helm M, Kruck P, Fromherz T, Weichselbaum A, Seto M, Bauer G, Moussa Z, Boucaud P, Julien FH, Lourtioz JM, Nutzel JF, Abstreiter G Thin Solid Films, 294(1-2), 330, 1997 |