화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure
Dixon-Warren S, Lu RP, Ingrey S, Macquistan D, Bryskiewicz T, Smith G, Bryskiewicz B
Journal of Vacuum Science & Technology A, 19(4), 1752, 2001
2 Structure of the Sinx/GaAs (110) Interface Modified with Ultrathin Si and Sulfur Passivation
Huang LJ, Lau WM, Tang HT, Lennard WN, Mitchell IV, Landheer D, Baribeau JM, Ingrey S
Journal of Vacuum Science & Technology B, 14(4), 2895, 1996
3 Interfacial Properties of Metal-Insulator-Semiconductor Capacitors on GaAs(110)
Huang LJ, Rajesh K, Lau WM, Ingrey S, Landheer D, Noel JP, Lu ZH
Journal of Vacuum Science & Technology A, 13(3), 792, 1995
4 X-Ray-Absorption Near-Edge Structures of Sulfur on Gas-Phase Polysulfide Treated InP Surfaces and at Sinx/InP Interfaces
Kwok RW, Huang LJ, Lau WM, Kasrai M, Feng X, Tan K, Ingrey S, Landheer D
Journal of Vacuum Science & Technology A, 12(5), 2701, 1994