| 1 |
Nitridation and oxynitridation of Si to control interfacial reaction with HfO2
Katarnreddy R, Inman R, Jursich G, Soulet A, Takoudis C
Thin Solid Films, 516(23), 8498, 2008 |
| 2 |
ALD and characterization of aluminum oxide deposited on Si(100) using tris(diethylamino) aluminum and water vapor (vol 153, pg C701, 2006)
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C
Journal of the Electrochemical Society, 154(4), S5, 2007 |
| 3 |
Atomic layer deposition of lanthana thin films using high-purity lanthanum amino precursors
Inman R, Schuetz SA, Silvernail CM, Balaz S, Dowben PA, Jursich G, McAndrew J, Belot JA
Materials Chemistry and Physics, 104(2-3), 220, 2007 |
| 4 |
Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100)
Katamreddy R, Inman R, Jursich G, Soulet A, Nicholls A, Takoudis C
Thin Solid Films, 515(17), 6931, 2007 |
| 5 |
ALD and characterization of aluminum oxide deposited on Si (100) using tris(diethylamino) aluminum and water vapor
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C
Journal of the Electrochemical Society, 153(10), C701, 2006 |
| 6 |
Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor
Deshpande A, Inman R, Jursich G, Takoudis C
Journal of Vacuum Science & Technology A, 22(5), 2035, 2004 |
