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| No. | Article |
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| 1 |
Bulk GaN substrate with overall dislocation density on the order of 10(5)/cm(2) fabricated by hydride vapor phase epitaxy Goubara S, Matsubara T, Yukizane K, Arita N, Fujimoto S, Ezaki T, Inomoto R, Yamane K, Okada N, Tadatomo K Journal of Crystal Growth, 478, 123, 2017 |