검색결과 : 10건
No. | Article |
---|---|
1 |
Low frequency noise investigation of n-MOSFET single cells for memory applications Ioannidis EG, Leisenberger FP, Enichlmair H Solid-State Electronics, 151, 36, 2019 |
2 |
Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET Ioannidis EG, Rohracher K, Roger F, Pflanzl WC, Leisenberger FP, Wachmann E, Seebacher E, Vescoli V Solid-State Electronics, 135, 1, 2017 |
3 |
Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 117, 88, 2016 |
4 |
Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs Ioannidis EG, Haendler S, Josse E, Planes N, Ghibaudo G Solid-State Electronics, 118, 4, 2016 |
5 |
Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET Ioannidis EG, Pflanzl WC, Stueckler E, Vescoli V, Carniello S, Seebacher E Solid-State Electronics, 126, 158, 2016 |
6 |
Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology Theodorou CG, Ioannidis EG, Haendler S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 111, 100, 2015 |
7 |
Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction Karatsori TA, Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 111, 123, 2015 |
8 |
Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 mu m down to 20 nm Ioannidis EG, Haendler S, Theodorou CG, Lasserre S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 95, 28, 2014 |
9 |
Characterization and modeling of low frequency noise in CMOS inverters Ioannidis EG, Haendler S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 81, 151, 2013 |
10 |
Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs Ioannidis EG, Dimitriadis CA, Haendler S, Bianchi RA, Jomaah J, Ghibaudo G Solid-State Electronics, 76, 54, 2012 |