검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
High rate InN growth by two-step precursor generation hydride vapor phase epitaxy Togashi R, Thieu QT, Murakami H, Kumagai Y, Ishitani Y, Monemar B, Koukitu A Journal of Crystal Growth, 422, 15, 2015 |
| 2 |
Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs Yoshikawa A, Che S, Ishitani Y, Wang XQ Journal of Crystal Growth, 311(7), 2073, 2009 |
| 3 |
Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix Yoshikawa A, Che SB, Hashimoto N, Saito H, Ishitani Y, Wang XQ Journal of Vacuum Science & Technology B, 26(4), 1551, 2008 |
| 4 |
In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy Wang XQ, Che SB, Ishitani Y, Yoshikawa A Journal of Crystal Growth, 301, 496, 2007 |
| 5 |
In-situ spectroscopic ellipsometry investigation and control of GaN growth mode in metal-organic vapor phase epitaxy at low pressures of 20 Torr Cao B, Xu K, Ishitani Y, Yoshikawa A Thin Solid Films, 455-56, 661, 2004 |
| 6 |
Matrix effect on hydrogen atom tunneling from alkane to free deuterium atoms in cryogenic solid Ichikawa T, Kagei K, Tachikawa H, Ishitani Y Journal of Physical Chemistry A, 103(32), 6288, 1999 |
| 7 |
Geminal Delocalization of Sigma-Electrons and Ring Strains Inagaki S, Ishitani Y, Kakefu T Journal of the American Chemical Society, 116(13), 5954, 1994 |