화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 A compact model and TCAD simulation for GaN-gate injection transistor (GIT)
Garcia F, Shamsir S, Islam SK
Solid-State Electronics, 151, 52, 2019
2 Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT
Huque MA, Eliza SA, Rahman T, Huq HF, Islam SK
Solid-State Electronics, 53(3), 341, 2009
3 Integration of a dose control circuit with a vertically aligned nanofiber field emission device
Rahman T, Islam SK, Vijayaraghavan R, Gundman T, Eliza SA, Hossain A, Blalock B, Randolph SJ
Journal of Vacuum Science & Technology B, 25(2), 655, 2007
4 All-inverter complementary metal oxide semiconductor based dose control circuit for using vertically aligned carbon nanofibers in maskless lithography
Islam SK, Durisety C, Vijayaraghavan R, Blalock BJ, Grundman T, Baylor LR, Gardner WL
Journal of Vacuum Science & Technology B, 24(2), 1026, 2006
5 Large-signal modeling of SOI MESFETs
Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton TJ
Solid-State Electronics, 50(6), 943, 2006
6 Effects of temperature variation (300-600 K) in MOSFET modeling in 6H-silicon carbide
Hasanuzzaman M, Islam SK, Tolbert LM
Solid-State Electronics, 48(1), 125, 2004
7 Temperature dependency of MOSFET device characteristics in 4H-and 6H-silicon carbide (SiC)
Hasanuzzaman M, Islam SK, Tolbert LM, Alam MT
Solid-State Electronics, 48(10-11), 1877, 2004