| 1 |
Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates
Lu XM, Kumagai N, Minami Y, Kitada T, Isu T
Journal of Crystal Growth, 477, 221, 2017 |
| 2 |
Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources
Lu XM, Ota H, Kumagai N, Minami Y, Kitada T, Isu T
Journal of Crystal Growth, 477, 249, 2017 |
| 3 |
Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap
Lu XM, Matsubara S, Nakagawa Y, Kitada T, Isu T
Journal of Crystal Growth, 425, 106, 2015 |
| 4 |
Terahertz emission from a coupled multilayer cavity with InAs quantum dots
Ogarane M, Katoh S, Nakagawa Y, Morita K, Kitada T, Isu T
Journal of Crystal Growth, 425, 303, 2015 |
| 5 |
Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers
Kitada T, Ueyama H, Morita K, Isu T
Journal of Crystal Growth, 378, 485, 2013 |
| 6 |
Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers
Kitada T, Takahashi T, Ueyama H, Morita K, Isu T
Journal of Crystal Growth, 323(1), 241, 2011 |
| 7 |
Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications
Kitada T, Mukai T, Takahashi T, Morita K, Isu T
Journal of Crystal Growth, 311(7), 1807, 2009 |
| 8 |
Real-Time Scanning Microprobe Reflection High-Energy Electron-Diffraction Observations of III-V Growth During Molecular-Beam Epitaxy
Isu T, Morishita Y, Goto S, Nomura Y, Katayama Y
Journal of Vacuum Science & Technology A, 12(4), 1176, 1994 |
| 9 |
Real-Time Scanning Microprobe Reflection High-Energy Electron-Diffraction Observations of InGaAs Surfaces During Molecular-Beam Epitaxy on InP Substrates
Morishita Y, Goto S, Nomura Y, Tamura M, Isu T, Katayama Y
Journal of Vacuum Science & Technology B, 12(4), 2532, 1994 |
| 10 |
Suppression of Side-Etching in C2H6/H-2/O-2 Reactive Ion Etching for the Fabrication of an InGaAsP/InP P-Substrate Buried-Heterostructure Laser-Diode
Sugimoto H, Isu T, Tada H, Miura T, Shiba T, Kimura T, Takemoto A
Journal of the Electrochemical Society, 140(12), 3615, 1993 |
