화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Hydrothermal synthesis of alpha- and beta-HgS nanostructures
Galain I, Maria PB, Ivana A, Laura F
Journal of Crystal Growth, 457, 227, 2017
2 Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors
Kong EYJ, Ivana, Zhang XG, Zhou Q, Pan JS, Zhang Z, Yeo YC
Solid-State Electronics, 85, 36, 2013
3 Selective Wet Etching Process for Ni-InGaAs Contact Formation in InGaAs N-MOSFETs with Self-Aligned Source and Drain
Subramanian S, Ivana, Zhou Q, Zhang XG, Balakrishnan M, Yeo YC
Journal of the Electrochemical Society, 159(1), H16, 2012
4 A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs
Zhang XG, Ivana, Guo HX, Gong X, Zhou Q, Yeo YC
Journal of the Electrochemical Society, 159(5), H511, 2012
5 CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs
Ivana, Kong EYJ, Subramanian S, Zhou Q, Pan JS, Yeo YC
Solid-State Electronics, 78, 62, 2012
6 Self-Aligned Gate-First In0.7Ga0.3As n-MOSFETs with an InP Capping Layer for Performance Enhancement
Gong XA, Ivana, Chin HC, Zhu Z, Lin YR, Ko CH, Wann CH, Yeo YC
Electrochemical and Solid State Letters, 14(3), H117, 2011
7 Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization
Zhang XG, Guo HX, Lin HY, Ivana, Gong XA, Zhou QA, Lin YR, Ko CH, Wann CH, Yeo YC
Electrochemical and Solid State Letters, 14(5), H212, 2011