검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Point-contact current voltage technique for depth profiling of dopants in silicon carbide Fukuda Y, Nishikawa K, Shimizu M, Iwakuro H Materials Science Forum, 389-3, 671, 2002 |
| 2 |
Stability of molybdenum Schottky contact to silicon carbide Nishikawa K, Shimizu M, Foster B, Iwakuro H Materials Science Forum, 353-356, 611, 2001 |
| 3 |
Interactions of thin films of Pd and Pd/Si on GaAs : an X-ray photoelectron spectroscopic study combined with a thermodynamic analysis Iwakuro H, Kuroda T, Shen DH, Yagi H Journal of Materials Science, 33(2), 379, 1998 |
| 4 |
Abrupt reduction in poly-Si etch rate in HBr/O-2 plasma Kuroda S, Iwakuro H Journal of Vacuum Science & Technology B, 16(4), 1846, 1998 |
| 5 |
Influence of Plasma Gas and Postcleaning on the Electrical Characteristics of Plasma-Exposed Al/N-Si Schottky Diodes Kuroda T, Lin ZD, Iwakuro H, Sato S Journal of Vacuum Science & Technology B, 15(2), 232, 1997 |
| 6 |
Enhanced Dry-Etching of Silicon with Deuterium Plasma Iwakuro H, Kuroda T, Shen DH, Lin ZD Journal of Vacuum Science & Technology B, 14(2), 707, 1996 |