검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers Gelczuk L, Dabrowska-Szata M, Sochacki M, Szmidt J Solid-State Electronics, 94, 56, 2014 |
| 2 |
A JBS diode with controlled forward temperature coefficient and surge current capability Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 389-3, 1129, 2002 |
| 3 |
A high performance JBS rectifier - design considerations Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 353-356, 683, 2001 |
| 4 |
A 2.8kV, forward drop JBS diode with low leakage Dahlquist F, Svedberg JO, Zetterling CM, Ostling M, Breitholtz B, Lendenmann H Materials Science Forum, 338-3, 1179, 2000 |