| 1 |
Silicon nitride hardmask fabrication using a cyclic CHF3-based reactive ion etching process for vertical profile nanostructures
Kaspar P, Jeyaram Y, Jackel H, Foelske A, Kotz R, Bellini S
Journal of Vacuum Science & Technology B, 28(6), 1179, 2010 |
| 2 |
Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP
Strasser P, Wuest R, Robin F, Erni D, Jackel H
Journal of Vacuum Science & Technology B, 25(2), 387, 2007 |
| 3 |
Comparative technology assessment of future InPHBT ultrahigh-speed digital circuits
Ruiz-Palmero JM, Hammer U, Jackel H, Liu H, Bolognesi CR
Solid-State Electronics, 51(6), 842, 2007 |
| 4 |
A physical hydrodynamic 2D model for simulation and scaling of InP/InGaAs(P) DHBTs and circuits with limited complexity
Ruiz-Palmero JM, Hammer U, Jackel H
Solid-State Electronics, 50(9-10), 1595, 2006 |
| 5 |
Growth of AlAsSb/InGaAs MBE-layers for all-optical switches
Cristea P, Fedoryshyn Y, Jackel H
Journal of Crystal Growth, 278(1-4), 544, 2005 |
| 6 |
Fabrication of a hard mask for InP based photonic crystals: Increasing the plasma-etch selectivity of poly(methyl methacrylate) versus SiO2 and SiNx
Wuest R, Strasser P, Robin F, Erni D, Jackel H
Journal of Vacuum Science & Technology B, 23(6), 3197, 2005 |
