화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
Nallatamby JC, Abdelhadi K, Jacquet JC, Prigent M, Floriot D, Delage S, Obregon J
Solid-State Electronics, 81, 35, 2013
2 GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application
Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S
Journal of Crystal Growth, 310(23), 5232, 2008
3 Thermal characterisation of AlGaN/GaN HEMTs using micro-Raman scattering spectroscopy and pulsed I-V measurements
Aubry R, Jacquet JC, Dua C, Gerard H, Dessertenne B, di Forte-Poisson MA, Cordier Y, Delage SL
Materials Science Forum, 457-460, 1625, 2004