화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy
Schumann T, Lopes JMJ, Wofford JM, Oliveira MH, Dubslaff M, Hanke M, Jahn U, Geelhaar L, Riechert H
Journal of Crystal Growth, 425, 274, 2015
2 Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)
Jenichen B, Herfort J, Jahn U, Trampert A, Riechert H
Thin Solid Films, 556, 120, 2014
3 The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H-2 and N-2 carrier gases
Wang X, Jahn U, Ledig J, Wehmann HH, Mandl M, Strassburg M, Waag A
Journal of Crystal Growth, 384, 61, 2013
4 Crystallization of amorphous In As/GaAs films on GaAs
Hey R, Santos PV, Luna E, Flissikowski T, Jahn U
Journal of Crystal Growth, 323(1), 5, 2011
5 Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well system
Fujiwara K, Jahn U, Luna E, Grahn HT
Journal of Crystal Growth, 323(1), 45, 2011
6 Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)
Gao CX, Brandt O, Lahnemann J, Herfort J, Schonherr HP, Jahn U, Jenichen B
Journal of Crystal Growth, 323(1), 359, 2011
7 Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
Bengoechea-Encabo A, Barbagini F, Fernandez-Garrido S, Grandal J, Ristic J, Sanchez-Garcia MA, Calleja E, Jahn U, Luna E, Trampert A
Journal of Crystal Growth, 325(1), 89, 2011
8 Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy
Dasilva YAR, Zhu T, Martin D, Grandjean N, Jahn U, Stadelmann P
Journal of Crystal Growth, 327(1), 6, 2011
9 Formation Mechanism of {0001} ZnO Epitaxial Layer on gamma-LiAlO2(100) Substrate by Chemical Vapor Deposition
Huang TH, Chang LW, Chou MMC, Jahn U
Journal of the Electrochemical Society, 158(1), H38, 2011
10 Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
Wang H, Jiang DS, Jahn U, Zhu JJ, Zhao DG, Liu ZS, Zhang SM, Yang H
Thin Solid Films, 518(17), 5028, 2010