검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY Solid-State Electronics, 82, 82, 2013 |
| 2 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY Solid-State Electronics, 86, 75, 2013 |
| 3 |
Highly scaled (L-g similar to 56 nm) gate-last Si tunnel field-effect transistors with I-ON > 100 mu A/mu m Loh WY, Jeon K, Kang CY, Oh J, Liu TJK, Tseng HH, Xiong WD, Majhi P, Jammy R, Hu CM Solid-State Electronics, 65-66, 22, 2011 |
| 4 |
Grain boundary-driven leakage path formation in HfO2 dielectrics Bersuker G, Yum J, Vandelli L, Padovani A, Larcher L, Iglesias V, Porti M, Nafria M, McKenna K, Shluger A, Kirsch P, Jammy R Solid-State Electronics, 65-66, 146, 2011 |
| 5 |
Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors Oh J, Huang J, Chen YT, Ok I, Jeon K, Lee SH, Sassman B, Loh WY, Lee HD, Ko DH, Majhi P, Kirsch P, Jammy R Thin Solid Films, 520(1), 442, 2011 |
| 6 |
Impact of Oxygen on Work Function of Ru Oxide Metal Gate Park CS, Bersuker G, Hung PY, Kirsch PD, Jammy R Electrochemical and Solid State Letters, 13(4), H105, 2010 |
| 7 |
Modified NiSi/Si Schottky Barrier Height by Nitrogen Implantation Kalra P, Vora N, Majhi P, Hung PY, Tseng HH, Jammy R, Liu TJK Electrochemical and Solid State Letters, 12(1), H1, 2009 |
| 8 |
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs Zhang YY, Oh J, Li SG, Jung SY, Park KY, Shin HS, Lee GW, Wang JS, Majhi P, Tseng HH, Jammy R, Bae TS, Lee HD Electrochemical and Solid State Letters, 12(1), H18, 2009 |
| 9 |
Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation Zhang YY, Choi CJ, Oh J, Han IS, Li SG, Park KY, Shin HS, Lee GW, Wang JS, Majhi P, Jammy R, Lee HD Electrochemical and Solid State Letters, 12(11), H402, 2009 |
| 10 |
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation Oh J, Majhi P, Tseng HH, Jammy R, Kelly DQ, Banedee SK, Campbell JC Thin Solid Films, 516(12), 4107, 2008 |