검색결과 : 13건
No. | Article |
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1 |
Control of stoichiometry and morphology in polycrystalline V(2)O(3)thin films using oxygen buffers Rupp JAJ, Corraze B, Besland MP, Cario L, Tranchant J, Wouters DJ, Waser R, Janod E Journal of Materials Science, 55(30), 14717, 2020 |
2 |
Ba2F2Fe1.5Se3: An Intergrowth Compound Containing Iron Selenide Layers Driss D, Janod E, Corraze B, Guillot-Deudon C, Cario L Inorganic Chemistry, 55(6), 2923, 2016 |
3 |
Metal-insulator transitions in (V1-xCrx)(2)O-3 thin films deposited by reactive direct current magnetron co-sputtering Querre M, Janod E, Cario L, Tranchant J, Corraze B, Bouquet V, Deputier S, Cordier S, Guilloux-Viry M, Besland MP Thin Solid Films, 617, 56, 2016 |
4 |
Resistive Switching in Mott Insulators and Correlated Systems Janod E, Tranchant J, Corraze B, Querre M, Stoliar P, Rozenberg M, Cren T, Roditchev D, Phuoc VT, Besland MP, Cario L Advanced Functional Materials, 25(40), 6287, 2015 |
5 |
Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators Stoliar P, Cario L, Janod E, Corraze B, Guillot-Deudon C, Salmon-Bourmand S, Guiot V, Tranchant J, Rozenberg M Advanced Materials, 25(23), 3222, 2013 |
6 |
Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application Souchier E, Besland MP, Tranchant J, Corraze B, Moreau P, Retoux R, Estournes C, Mazoyer P, Cario L, Janod E Thin Solid Films, 533, 54, 2013 |
7 |
Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers Tranchant J, Janod E, Cario L, Corraze B, Souchier E, Leclercq JL, Cremillieu P, Moreau P, Besland MP Thin Solid Films, 533, 61, 2013 |
8 |
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories Cario L, Vaju C, Corraze B, Guiot V, Janod E Advanced Materials, 22(45), 5193, 2010 |
9 |
Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8 Dorolti E, Cario L, Corraze B, Janod E, Vaju C, Koo HJ, Kan E, Whangbo MH Journal of the American Chemical Society, 132(16), 5704, 2010 |
10 |
Electric-Field-Assisted Nanostructuring of a Mott Insulator Dubost V, Cren T, Vaju C, Cario L, Corraze B, Janod E, Debontridder F, Roditchev D Advanced Functional Materials, 19(17), 2800, 2009 |