검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Formation of precipitates in heavily boron doped 4H-SiC Linnarsson MK, Janson MS, Nordell N, Wong-Leung J, Schoner A Applied Surface Science, 252(15), 5316, 2006 |
| 2 |
Properties of the bound excitons associated to the 3838 angstrom line in 4H-SiC and the 4182 angstrom line in 6H-SiC Henry A, Janson MS, Janzen E Materials Science Forum, 457-460, 549, 2004 |
| 3 |
Boron diffusion in intrinsic, n-type and p-type 4H-SiC Linnarsson MK, Janson MS, Shoner A, Konstantinov A, Svensson BG Materials Science Forum, 457-460, 917, 2004 |
| 4 |
Solubility limits of dopants in 4H-SiC Linnarsson MK, Zimmermann U, Wong-Leung J, Schoner A, Janson MS, Jagadish C, Svensson BG Applied Surface Science, 203, 427, 2003 |
| 5 |
Incorporation of hydrogen (H-1 and H-2) into 4H-SiC during epitaxial growth Linnarsson MK, Forsberg U, Janson MS, Janzen E, Svensson BG Materials Science Forum, 389-3, 565, 2002 |
| 6 |
Range distributions of implanted ions in silicon carbide Janson MS, Linnarsson MK, Hallen A, Svensson BG Materials Science Forum, 389-3, 779, 2002 |
| 7 |
The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures Uneus L, Nakagomi S, Linnarsson M, Janson MS, Svensson BG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Ekedahl LG, Lunstrom I, Spetz AL Materials Science Forum, 389-3, 1419, 2002 |
| 8 |
Vacancy-type defect distributions of B-11-, N-14- and Al-27-implanted 4H-SiC studied by Positron Annihilation Spectroscopy Janson MS, Slotte J, Kuznetsov AY, Saarinen K, Hallen A Materials Science Forum, 433-4, 641, 2002 |
| 9 |
Hydrogen-boron complex formation and dissociation in 4H-silicon carbide Janson MS, Hallen A, Linnarsson MK, Svensson BG Applied Surface Science, 184(1-4), 257, 2001 |
| 10 |
Dissociation energy of the passivating hydrogen-aluminum complex in 4H-SiC Janson MS, Hallen A, Linnarsson MK, Nordell N, Karlsson S, Svensson BG Materials Science Forum, 353-356, 427, 2001 |