검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3 Azzaz M, Benoist A, Vianello E, Garbin D, Jalaguier E, Cagli C, Charpin C, Bernasconi S, Jeannot S, Dewolf T, Audoit G, Guedj C, Denorme S, Candelier P, Fenouillet-Beranger C, Perniola L Solid-State Electronics, 125, 182, 2016 |
| 2 |
Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B Thin Solid Films, 533, 24, 2013 |
| 3 |
Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications Salaun A, Grampeix H, Buckley J, Mannequin C, Vallee C, Gonon P, Jeannot S, Gaumer C, Gros-Jean M, Jousseaume V Thin Solid Films, 525, 20, 2012 |