검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Gate-based high fidelity spin readout in a CMOS device Urdampilleta M, Niegemann DJ, Chanrion E, Jadot B, Spence C, Mortemousque PA, Bauerle C, Hutin L, Bertrand B, Barraud S, Maurand R, Sanquer M, Jehl X, De Franceschi S, Vinet M, Meunier T Nature Nanotechnology, 14(8), 737, 2019 |
| 2 |
Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: to Single Electron Transistor Deshpande V, Barraud S, Jehl X, Wacquez R, Vinet M, Coquand R, Roche B, Voisin B, Triozon F, Vizioz C, Tosti L, Previtali B, Perreau P, Poiroux T, Sanquer M, Faynot O Solid-State Electronics, 84, 179, 2013 |
| 3 |
Single-donor ionization energies in a nanoscale CMOS channel Pierre M, Wacquez R, Jehl X, Sanquer M, Vinet M, Cueto O Nature Nanotechnology, 5(2), 133, 2010 |
| 4 |
Capacitance measurements in nanometric silicon devices using Coulomb blockade Hofheinz M, Jehl X, Sanquer M, Cueto O, Molas G, Vinet M, Deleonibus S Solid-State Electronics, 51(4), 560, 2007 |
| 5 |
Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices Bertrand G, Deleonibus S, Previtali B, Guegan G, Jehl X, Sanquer M, Balestra F Solid-State Electronics, 48(4), 505, 2004 |
| 6 |
High resolution transport spectroscopy in ultimate MOSFETs at very low temperature Sanquer M, Jehl X, Specht M, Bertrand G, Guegan G, Deleonibus S Solid-State Electronics, 48(12), 2213, 2004 |