화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes
Wang CK, Hung KC, Chiou YZ, Jheng JS, Chang SP, Chang SJ
Journal of Crystal Growth, 468, 562, 2017
2 Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses
Wang CK, Wang YW, Chiou YZ, Chang SH, Jheng JS, Chang SP, Chang SJ
Journal of Crystal Growth, 468, 585, 2017