검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory Tseng HC, Chang TC, Cheng KH, Huang JJ, Chen YT, Jian FY, Sze SM, Tsai MJ, Chu AK, Wang YL Thin Solid Films, 529, 389, 2013 |
| 2 |
Thermal Effect on the Gate-Drain Bias Stress for Amorphous InGaZnO Thin Film Transistors Huang SY, Chang TC, Chen MC, Chen SC, Chen TC, Jian FY Electrochemical and Solid State Letters, 15(5), H161, 2012 |
| 3 |
Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance-voltage measurements Huang SY, Chang TC, Chen MC, Jian FY, Chen SC, Chen TC, Jheng JL, Lou MJ, Yeh FS Solid-State Electronics, 69, 11, 2012 |
| 4 |
Transient Effect Assisted NBTI Degradation in p-Channel LTPS TFTs under Dynamic Stress Lin CS, Chen YC, Chang TC, Li HW, Chen SC, Hsu WC, Jian FY, Chen TC, Tai YH Journal of the Electrochemical Society, 158(1), H10, 2011 |
| 5 |
Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination Chen TC, Chang TC, Hsieh TY, Tsai CT, Chen SC, Lin CS, Jian FY, Tsai MY Thin Solid Films, 520(5), 1422, 2011 |
| 6 |
Effect of N(2)O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors Hsieh TY, Chang TC, Chen TC, Tsai MY, Lu WH, Chen SC, Jian FY, Lin CS Thin Solid Films, 520(5), 1427, 2011 |
| 7 |
Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors Chang GW, Chang TC, Syu YE, Tsai TM, Chang KC, Tu CH, Jian FY, Hung YC, Tai YH Thin Solid Films, 520(5), 1608, 2011 |
| 8 |
Unusual Threshold Voltage Shift Caused by Self-Heating-Induced Charge Trapping Effect Jian FY, Chang TC, Chu AK, Chen TC, Chen SC, Lin CS, Li HW, Lee MH, Chen JS, Shih CC Electrochemical and Solid State Letters, 13(4), H95, 2010 |
| 9 |
A 2 Bit Nonvolatile Memory Device with a Transistor Switch Function Accomplished with Edge-FN Tunneling Operation Jian FY, Chang TC, Chu AK, Chen SC, Chen TC, Hsu YE, Tseng HC, Lin CS, Young TF, Yang YL Electrochemical and Solid State Letters, 13(5), H166, 2010 |
| 10 |
Asymmetric Negative Bias Temperature Instability Degradation of Poly-Si TFTs under Static Stress Weng CF, Chang TC, Jian FY, Chen SC, Lu J, Lu IC Journal of the Electrochemical Society, 157(1), H22, 2010 |