검색결과 : 1건
No. | Article |
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1 |
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD Wang XL, Hu GX, Ma ZY, Ran JX, Wang CM, Mao HL, Tang H, Li HP, Wang JX, Zeng YP, Jinmin LM, Wang ZG Journal of Crystal Growth, 298, 835, 2007 |