검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth Lai KY, Paskova T, Wheeler VD, Grenko JA, Johnson MAL, Udwary K, Preble EA, Evans KR Journal of Crystal Growth, 312(7), 902, 2010 |
| 2 |
An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration Park J, Ozbek AM, Ma L, Veety MT, Morgensen MP, Barlage DW, Wheeler VD, Johnson MAL Solid-State Electronics, 54(12), 1680, 2010 |
| 3 |
Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts Saripalli YN, Zeng C, Long JP, Barlage DW, Johnson MAL, Braddock D Journal of Crystal Growth, 287(2), 562, 2006 |
| 4 |
Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures Johnson MAL, Brown JD, El-Masry NA, Cook JW, Schetzina JF, Kong HS, Edmond JA Journal of Vacuum Science & Technology B, 16(3), 1282, 1998 |