검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Ferroelectric Gd-doped ZnO nanostructures: Enhanced dielectric, ferroelectric and piezoelectric properties Goel S, Sinha N, Yadav H, Godara S, Joseph AJ, Kumar B Materials Chemistry and Physics, 202, 56, 2017 |
| 2 |
The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology Haugerud BM, Nayeern MB, Krithivasan R, Lu Y, Zhu CD, Cressler JD, Belford RE, Joseph AJ Solid-State Electronics, 49(6), 986, 2005 |
| 3 |
Proton response of low-frequency noise in 0.20 mu m 90 GHz f(T) UHV/CVD SiGeHBTs Jin ZR, Cressler JD, Niu GF, Marshall PW, Kim HS, Reed R, Joseph AJ Solid-State Electronics, 47(1), 39, 2003 |
| 4 |
The effects of operating bias conditions on the proton tolerance of SiGeHBTs Zhang SM, Cressler JD, Niu GF, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL Solid-State Electronics, 47(10), 1729, 2003 |
| 5 |
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGeHBTs Niu GF, Juraver JB, Borgarino M, Jin ZR, Cressler JD, Plana R, Llopis O, Mathew S, Zhang SM, Clark S, Joseph AJ Solid-State Electronics, 45(1), 107, 2001 |
| 6 |
Device design and circuit modeling issues in ultrahigh vacuum chemical vapor deposition SiGe heterojunction bipolar transistors Cressler JD, Joseph AJ, Salmon SL, Harame DL Journal of Vacuum Science & Technology B, 16(3), 1516, 1998 |