검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Characterization and optimization of MIS-HEMTs device of high similar to k dielectric material on quaternary barrier of Al0.42In0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application Tarauni YU, Thiruvadigal DJ, Joseph HB Applied Surface Science, 488, 427, 2019 |
| 2 |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping Joseph HB, Singh SK, Hariharan RM, Priya PA, Kumar NM, Thiruvadigal DJ Applied Surface Science, 449, 823, 2018 |