검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Probing Self-Assembly of Cylindrical Morphology Block Copolymer Using in Situ and ex Situ Grazing Incidence Small-Angle X-ray Scattering: The Attractive Case of Graphoepitaxy Maret M, Tiron R, Chevalier X, Gergaud P, Gharbi A, Lapeyre C, Pradelles J, Jousseaume V, Fleury G, Hadziioannou G, Boudet N, Navarro C Macromolecules, 47(20), 7221, 2014 |
| 2 |
On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories Longnos F, Vianello E, Cagli C, Molas G, Souchier E, Blaise P, Carabasse C, Rodriguez G, Jousseaume V, De Salvo B, Dahmani F, Verrier P, Bretegnier D, Liebault J Solid-State Electronics, 84, 155, 2013 |
| 3 |
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory Cabout T, Buckley J, Cagli C, Jousseaume V, Nodin JF, de Salvo B, Bocquet M, Muller C Thin Solid Films, 533, 19, 2013 |
| 4 |
Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B Thin Solid Films, 533, 24, 2013 |
| 5 |
Dielectric Constant of Porous Ultra Low-kappa Thin Films Jousseaume V, Gourhant O, Gonon P, Zenasni A, Favennec L Journal of the Electrochemical Society, 159(5), G49, 2012 |
| 6 |
Dielectric Constant of Porous Ultra Low-kappa Thin Films (vol 159, pg G49, 2012) Jousseaume V, Gourhant O, Gonon P, Zenasni A, Favennec L Journal of the Electrochemical Society, 159(5), S11, 2012 |
| 7 |
Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material Bertaud T, Walczyk D, Walczyk C, Kubotsch S, Sowinska M, Schroeder T, Wenger C, Vallee C, Gonon P, Mannequin C, Jousseaume V, Grampeix H Thin Solid Films, 520(14), 4551, 2012 |
| 8 |
Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications Salaun A, Grampeix H, Buckley J, Mannequin C, Vallee C, Gonon P, Jeannot S, Gaumer C, Gros-Jean M, Jousseaume V Thin Solid Films, 525, 20, 2012 |
| 9 |
Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B Solid-State Electronics, 58(1), 62, 2011 |
| 10 |
Catalyst preparation for CMOS-compatible silicon nanowire synthesis Renard VT, Jublot M, Gergaud P, Cherns P, Rouchon D, Chabli A, Jousseaume V Nature Nanotechnology, 4(10), 654, 2009 |