검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Crystal twisting in Cz Si growth Kalaev V, Sattler A, Kadinski L Journal of Crystal Growth, 413, 12, 2015 |
| 2 |
Kinetics of SiGe chemical vapor deposition from chloride precursors Lovtsus AA, Segal AS, Sid'ko AP, Talalaev RA, Storck P, Kadinski L Journal of Crystal Growth, 287(2), 446, 2006 |
| 3 |
On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters Mitrovic B, Gurary A, Kadinski L Journal of Crystal Growth, 287(2), 656, 2006 |
| 4 |
Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Mitrovic B, Parekh A, Ramer J, Merai V, Armour EA, Kadinski L, Gurary A Journal of Crystal Growth, 289(2), 708, 2006 |
| 5 |
Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Kadinski L, Merai V, Parekh A, Ramer J, Armour EA, Stall R, Gurary A, Galyukov A, Makarov Y Journal of Crystal Growth, 261(2-3), 175, 2004 |
| 6 |
Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors Mazaev KM, Lobanova AV, Yakovlev EV, Talalaev RA, Galyukov AO, Makarov YN, Gotthold D, Albert B, Kadinski L, Peres B Journal of Crystal Growth, 261(2-3), 190, 2004 |
| 7 |
Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors Lobanova A, Mazaev K, Yakovlev E, Talalaev R, Galyukov A, Makarov Y, Gotthold D, Albert B, Kadinski L, Peres B Journal of Crystal Growth, 266(1-3), 354, 2004 |
| 8 |
On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor Hardtdegen H, Kaluza A, Gauer D, vander Ahe M, Grimm M, Kauffmann P, Kadinski L Journal of Crystal Growth, 223(1-2), 15, 2001 |
| 9 |
Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N-2 and H-2 Dauelsberg M, Hardtdegen H, Kadinski L, Kaluza A, Kaufmann P Journal of Crystal Growth, 223(1-2), 21, 2001 |
| 10 |
Impact of source material on silicon carbide vapor transport growth process Wellmann PJ, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A Journal of Crystal Growth, 225(2-4), 312, 2001 |