검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ca0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor Yoon SF, Kam AHT, Gay BP, Zheng HQ Solid-State Electronics, 44(6), 1035, 2000 |
| 2 |
A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system Yoon SF, Kam AHT, Gay BP, Zheng HQ Solid-State Electronics, 44(7), 1267, 2000 |