검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique Tokuda Y, Kamata I, Hoshino N, Kato T, Okumura H, Kimoto T, Tsuchida H Journal of Crystal Growth, 468, 889, 2017 |
| 2 |
Fast growth of n-type 4H-SiC bulk crystal by gas-source method Hoshino N, Kamata I, Tokuda Y, Makino E, Kanda T, Sugiyama N, Kuno H, Kojima J, Tsuchida H Journal of Crystal Growth, 478, 9, 2017 |
| 3 |
Stable and high-speed SiC bulk growth without dendrites by the HTCVD method Tokuda Y, Makino E, Sugiyama N, Kamata I, Hoshino N, Kojima J, Hara K, Tsuchida H Journal of Crystal Growth, 448, 29, 2016 |
| 4 |
Deflection of threading dislocations in patterned 4H-SiC epitaxial growth Tsuchida H, Takanashi R, Kamata I, Hoshino N, Makino E, Kojima J Journal of Crystal Growth, 402, 260, 2014 |
| 5 |
Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography Kamata I, Nagano M, Tsuchida H, Chen Y, Dudley M Journal of Crystal Growth, 311(5), 1416, 2009 |
| 6 |
Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth Tsuchida H, Kamata I, Nagano M Journal of Crystal Growth, 310(4), 757, 2008 |
| 7 |
Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching Tsuchida H, Kamata I, Nagano M Journal of Crystal Growth, 306(2), 254, 2007 |
| 8 |
Investigation of basal plane dislocations in the 4H-SiC epilayers grown on {0001} substrates Tsuchida A, Miyanagi T, Kamata I, Nakamura T, Izumi K, Nakayama K, Ishii R, Asano K, Sugawara Y Materials Science Forum, 483, 97, 2005 |
| 9 |
Structure of in-grown stacking faults in the 4H-SiC epitaxial layers Izumi S, Tsuchida H, Tawara T, Kamata I, Izumi K Materials Science Forum, 483, 323, 2005 |
| 10 |
Improvement in electrical performance of Schottky contacts for high-voltage diode Nakamura T, Miyanagi T, Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 483, 721, 2005 |