| 1 |
Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers
Moriyama Y, Ikeda K, Kamimuta Y, Oda M, Irisawa T, Nakamura Y, Sakai A, Tezuka T
Solid-State Electronics, 83, 42, 2013 |
| 2 |
Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal-Insulator-Semiconductor Field-Effect Transistors with SiGe stressors
Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T
Thin Solid Films, 520(8), 3236, 2012 |
| 3 |
Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs
Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T
Solid-State Electronics, 60(1), 89, 2011 |
| 4 |
Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacks
Mizubayashi W, Akiyama K, Wang W, Ikeda M, Iwamoto K, Kamimuta Y, Hirano A, Ota H, Nabatame T, Toriumi A
Applied Surface Science, 254(19), 6123, 2008 |
| 5 |
Backside-SIMS profiling of dopants in thin Hf silicate film
Hongo C, Takenaka M, Kamimuta Y, Suzuki M, Koyama M
Applied Surface Science, 231-2, 594, 2004 |
