검색결과 : 26건
No. | Article |
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1 |
Optoelectronic resistive random access memory for neuromorphic vision sensors Zhou FC, Zhou Z, Chen JW, Choy TH, Wang JL, Zhang N, Lin ZY, Yu SM, Kang JF, Wong HSP, Chai Y Nature Nanotechnology, 14(8), 776, 2019 |
2 |
Preparation of graphene-glass fiber-resin composites and its electromagnetic shielding performance Wan XR, Lu H, Kang JF, Li S, Yue YL Composite Interfaces, 25(10), 883, 2018 |
3 |
Developing a city-centric global multiregional input-output model (CCG-MRIO) to evaluate urban carbon footprints Lin JY, Hu YC, Zhao XF, Shi LY, Kang JF Energy Policy, 108, 460, 2017 |
4 |
Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits Huang P, Kang JF, Zhao YD, Chen SJ, Han RZ, Zhou Z, Chen Z, Ma WJ, Li M, Liu LF, Liu XY Advanced Materials, 28(44), 9758, 2016 |
5 |
An extended stochastic reconstruction method for catalyst layers in proton exchange membrane fuel cells Kang JF, Moriyama K, Kim SH Journal of Power Sources, 325, 752, 2016 |
6 |
A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation Yu SM, Gao B, Fang Z, Yu HY, Kang JF, Wong HSP Advanced Materials, 25(12), 1774, 2013 |
7 |
Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers Yu SM, Gao B, Dai HB, Sun B, Liu LF, Liu XY, Han RQ, Kang JF, Yu B Electrochemical and Solid State Letters, 13(2), H36, 2010 |
8 |
Scalability and reliability characteristics of CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications Kang JF, Yu HY, Ren C, Sa N, Yang H, Li MF, Chan DSH, Liu XY, Han RQ, Kwong DL Journal of the Electrochemical Society, 154(11), H927, 2007 |
9 |
Oxygen-vacancies-related room-temperature ferromagnetism in polycrystalline bulk co-doped TiO2 Kong LG, Kang JF, Wang Y, Sun L, Liu LF, Liu XY, Zhang X, Han RQ Electrochemical and Solid State Letters, 9(1), G1, 2006 |
10 |
Ultrathin HfO2(EOT < 0.75nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process Kang JF, Yu HY, Ren C, Li MF, Chan DSH, Liu XY, Kwong DL Electrochemical and Solid State Letters, 8(11), G311, 2005 |