| 1 |
Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system
Kanisawa K
Journal of Crystal Growth, 401, 381, 2014 |
| 2 |
Quantum dots with single-atom precision
Folsch S, Martinez-Blanco J, Yang JS, Kanisawa K, Erwin SC
Nature Nanotechnology, 9(7), 505, 2014 |
| 3 |
Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface
Kanisawa K
Journal of Crystal Growth, 378, 8, 2013 |
| 4 |
Atom-by-atom assembly and spectroscopy of In/InAs(111)A adatom chains by low-temperature scanning tunneling microscopy
Yang JS, Nacci C, Kanisawa K, Folsch S
Journal of Vacuum Science & Technology B, 28(4), C5G1, 2010 |
| 5 |
Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well
Suzuki K, Kanisawa K, Perraud S, Fujisawa T
Applied Surface Science, 254(23), 7889, 2008 |
| 6 |
Imaging of subbands in InAs/GaSb double quantum wells by low-temperature scanning tunneling spectroscopy
Suzuki K, Kanisawa K, Perraud S, Ueki M, Takashina K, Hirayama Y
Journal of Crystal Growth, 301, 97, 2007 |
| 7 |
Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy
Perraud S, Kanisawa K, Wang ZZ, Hirayama Y
Journal of Crystal Growth, 301, 148, 2007 |
| 8 |
Stable reconstruction and adsorbates of InAs(111)A surface
Taguchi A, Kanisawa K
Applied Surface Science, 252(15), 5263, 2006 |
