검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Al2O3 tunnel barrier as a good candidate for spin injection into silicon Benabderrahmane R, Kanoun M, Bruyant N, Baraduc C, Bsiesy A, Achard H Solid-State Electronics, 54(8), 741, 2010 |
| 2 |
On the saturation mechanism in the Ge nanocrystals-based non-volatile memory Kanoun M, Busseret C, Baron T, Souifi A Solid-State Electronics, 50(5), 769, 2006 |
| 3 |
Electronic properties of Ge nanocrystals for non volatile memory applications Kanoun M, Busseret C, Poncet A, Souifi A, Baron T, Gautier E Solid-State Electronics, 50(7-8), 1310, 2006 |