화학공학소재연구정보센터
검색결과 : 43건
No. Article
1 The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
Massabuau FCP, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA
Journal of Crystal Growth, 386, 88, 2014
2 Evaluation of growth methods for the heteroepitaxy of non-polar (11(2)over-bar0) GAN on sapphire by MOVPE
Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P, Oliver RA
Journal of Crystal Growth, 408, 32, 2014
3 Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ, Oliver RA
Journal of Crystal Growth, 383, 12, 2013
4 The effect of dislocations on the efficiency of InGaN/GaN solar cells
Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F, Humphreys CJ
Solar Energy Materials and Solar Cells, 117, 279, 2013
5 Growth and optical characterisation of multilayers of InGaN quantum dots
Zhu TT, El-Ella HAR, Reid B, Holmes MJ, Taylor RA, Kappers MJ, Oliver RA
Journal of Crystal Growth, 338(1), 262, 2012
6 Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements
Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ, Humphreys CJ
Thin Solid Films, 520(7), 3064, 2012
7 The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy
Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 314(1), 13, 2011
8 InGaN super-lattice growth for fabrication of quantum dot containing microdisks
El-Ella HAR, Rol F, Collins DP, Kappers MJ, Taylor RA, Hu EL, Oliver RA
Journal of Crystal Growth, 321(1), 113, 2011
9 The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy
Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 331(1), 4, 2011
10 Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
Hao R, Kappers MJ, Moram MA, Humphreys CJ
Journal of Crystal Growth, 337(1), 81, 2011