화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Reliable ohmic contacts to LPE p-type 4H-SiC for high-power p-n diode
Kakanakov R, Kassamakova L, Hristeva N, Lepoeva G, Kuznetsov N, Zekentes K
Materials Science Forum, 389-3, 917, 2002
2 Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC
Kassamakova L, Kakanakov R, Yakimova R, Kakanakova-Georgieva A, Syvajarvi M, Wilzen L, Janzen E
Materials Science Forum, 389-3, 929, 2002
3 4H-SiC pn diode grown by LPE method for high power applications
Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V
Materials Science Forum, 433-4, 867, 2002
4 Reliability of 4H-SiC p-n diodes on LPE grown layers
Sarov G, Kakanakov R, Cholakova T, Kassamakova L, Hristeva N, Lepoeva G, Philipova P, Kuznetsov N, Zekentes K
Materials Science Forum, 433-4, 929, 2002
5 Origin of the excellent thermal stability of Al/Si-based ohmic contacts to p-type LPE 4H-SiC
Kassamakova L, Kakanakov R, Kassamakov I, Zekentes K, Tsagaraki K, Atanasova G
Materials Science Forum, 353-356, 251, 2001
6 Al/Si ohmic contacts to p-type 4H-SiC for power devices
Kassamakova L, Kakanakov R, Kassamakov I, Nordell N, Savage S, Svedberg EB, Madsen LD
Materials Science Forum, 338-3, 1009, 2000