검색결과 : 6건
No. | Article |
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1 |
Reliable ohmic contacts to LPE p-type 4H-SiC for high-power p-n diode Kakanakov R, Kassamakova L, Hristeva N, Lepoeva G, Kuznetsov N, Zekentes K Materials Science Forum, 389-3, 917, 2002 |
2 |
Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC Kassamakova L, Kakanakov R, Yakimova R, Kakanakova-Georgieva A, Syvajarvi M, Wilzen L, Janzen E Materials Science Forum, 389-3, 929, 2002 |
3 |
4H-SiC pn diode grown by LPE method for high power applications Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V Materials Science Forum, 433-4, 867, 2002 |
4 |
Reliability of 4H-SiC p-n diodes on LPE grown layers Sarov G, Kakanakov R, Cholakova T, Kassamakova L, Hristeva N, Lepoeva G, Philipova P, Kuznetsov N, Zekentes K Materials Science Forum, 433-4, 929, 2002 |
5 |
Origin of the excellent thermal stability of Al/Si-based ohmic contacts to p-type LPE 4H-SiC Kassamakova L, Kakanakov R, Kassamakov I, Zekentes K, Tsagaraki K, Atanasova G Materials Science Forum, 353-356, 251, 2001 |
6 |
Al/Si ohmic contacts to p-type 4H-SiC for power devices Kassamakova L, Kakanakov R, Kassamakov I, Nordell N, Savage S, Svedberg EB, Madsen LD Materials Science Forum, 338-3, 1009, 2000 |