| 1 |
Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx
Katamreddy R, Feist B, Takoudis C
Journal of the Electrochemical Society, 155(8), G163, 2008 |
| 2 |
Atomic layer deposited ultrathin HfO2 and Al2O3 films as diffusion barriers in copper interconnects
Majumder P, Katamreddy R, Takoudis C
Electrochemical and Solid State Letters, 10(10), H291, 2007 |
| 3 |
Effect of film thickness on the breakdown temperature of atomic layer deposited ultrathin HfO2 and Al2O3 diffusion barriers in copper metallization
Majumder P, Katamreddy R, Takoudis C
Journal of Crystal Growth, 309(1), 12, 2007 |
| 4 |
ALD and characterization of aluminum oxide deposited on Si(100) using tris(diethylamino) aluminum and water vapor (vol 153, pg C701, 2006)
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C
Journal of the Electrochemical Society, 154(4), S5, 2007 |
| 5 |
Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100)
Katamreddy R, Inman R, Jursich G, Soulet A, Nicholls A, Takoudis C
Thin Solid Films, 515(17), 6931, 2007 |
| 6 |
ALD and characterization of aluminum oxide deposited on Si (100) using tris(diethylamino) aluminum and water vapor
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C
Journal of the Electrochemical Society, 153(10), C701, 2006 |
