검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography Kinno T, Akutsu H, Tomita M, Kawanaka S, Sonehara T, Hokazono A, Renaud L, Martin I, Benbalagh R, Salle B, Takeno S Applied Surface Science, 259, 726, 2012 |
| 2 |
A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology Okamoto H, Yasutake N, Kusunoki N, Adachi K, Itokawa H, Miyano K, Ishida T, Hokazono A, Kawanaka S, Mizushima I, Azuma A, Toyoshima Y Solid-State Electronics, 53(7), 712, 2009 |
| 3 |
A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond Yasutake N, Azuma A, Ishida T, Ohuchi K, Aoki N, Kusunoki N, Mori S, Mizushima I, Morooka T, Kawanaka S, Toyoshima Y Solid-State Electronics, 51(11-12), 1437, 2007 |
| 4 |
An experimental study of supercritical fluid drying of Y-Ba-Cu oxides powder from aqueous alcohol suspension using carbon dioxide Tachiwaki T, Takase Y, Sugimoto J, Oda M, Kawanaka S Particulate Science and Technology, 16(2), 109, 1998 |