화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Elaboration and characterization of boron doping during SiC growth by VLS mechanism
Soueidan M, Ferro G, Nsouli B, Roumie M, Habka N, Souliere V, Bluet JM, Kazan M
Journal of Crystal Growth, 327(1), 46, 2011
2 Properties of surface and interface structure of AlN/3C-SiC/Ge/Si (111) heterostructure
Nader R, Kazan M, Zgheib C, Pezoldt J, Masri P
Journal of Crystal Growth, 311(23-24), 4665, 2009
3 What causes rough surface in AlN crystal growth?
Kazan M, Nader R, Moussaed E, Masri P
Journal of Crystal Growth, 290(1), 44, 2006
4 Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
Zgheib C, Forster C, Weih R, Cimalla V, Kazan M, Masri R, Ambacher O, Pezoldt J
Thin Solid Films, 455-56, 183, 2004