검색결과 : 4건
No. | Article |
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1 |
Elaboration and characterization of boron doping during SiC growth by VLS mechanism Soueidan M, Ferro G, Nsouli B, Roumie M, Habka N, Souliere V, Bluet JM, Kazan M Journal of Crystal Growth, 327(1), 46, 2011 |
2 |
Properties of surface and interface structure of AlN/3C-SiC/Ge/Si (111) heterostructure Nader R, Kazan M, Zgheib C, Pezoldt J, Masri P Journal of Crystal Growth, 311(23-24), 4665, 2009 |
3 |
What causes rough surface in AlN crystal growth? Kazan M, Nader R, Moussaed E, Masri P Journal of Crystal Growth, 290(1), 44, 2006 |
4 |
Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces Zgheib C, Forster C, Weih R, Cimalla V, Kazan M, Masri R, Ambacher O, Pezoldt J Thin Solid Films, 455-56, 183, 2004 |