검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Ion-Irradiation-Induced Defects in Isotopically-Labeled Two Layered Graphene: Enhanced In-Situ Annealing of the Damage Kalbac M, Lehtinen O, Krasheninnikov AV, Keinonen J Advanced Materials, 25(7), 1004, 2013 |
| 2 |
Atomic layer deposition of molybdenum nitride thin films for Cu metallizations Alen P, Ritala M, Arstila K, Keinonen J, Leskela M Journal of the Electrochemical Society, 152(5), G361, 2005 |
| 3 |
The growth and diffusion barrier properties of atomic layer deposited NbNx thin films Alen P, Ritala M, Arstila K, Keinonen J, Leskela M Thin Solid Films, 491(1-2), 235, 2005 |
| 4 |
Properties of oxide film atomic layer deposited from tetraethoxy silane, hafnium halides, and water Kukli K, Ritala M, Leskela M, Sajavaara T, Keinonen J, Hegde RI, Gilmer DC, Tobin PJ Journal of the Electrochemical Society, 151(5), F98, 2004 |
| 5 |
ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor Alen P, Aaltonen T, Ritala M, Leskela M, Sajavaara T, Keinonen J, Hooker JC, Maes JW Journal of the Electrochemical Society, 151(8), G523, 2004 |
| 6 |
Upper size limit of complete contact epitaxy Meinander K, Frantz J, Nordlund K, Keinonen J Thin Solid Films, 425(1-2), 297, 2003 |
| 7 |
Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water Kukli K, Ritala M, Sajavaara T, Keinonen J, Leskela M Advanced Materials, 14(17), A199, 2002 |
| 8 |
Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources Juppo M, Alen P, Ritala M, Sajavaara T, Keinonen J, Leskela M Electrochemical and Solid State Letters, 5(1), C4, 2002 |
| 9 |
Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors Kukli K, Ritala M, Sajavaara T, Keinonen J, Leskela M Thin Solid Films, 416(1-2), 72, 2002 |
| 10 |
Chemical sputtering of amorphous silicon carbide under hydrogen bombardment Salonen E, Nordlund K, Keinonen J, Wu CH Applied Surface Science, 184(1-4), 387, 2001 |