검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD Kelekci O, Tasli P, Cetin SS, Kasap M, Ozcelik S, Ozbay E Current Applied Physics, 12(6), 1600, 2012 |
| 2 |
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC Caban P, Strupinski W, Szmidt J, Wojcik M, Gaca J, Kelekci O, Caliskan D, Ozbay E Journal of Crystal Growth, 315(1), 168, 2011 |