검색결과 : 16건
No. | Article |
---|---|
1 |
Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers Novikov SV, Staddon CR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 425, 125, 2015 |
2 |
Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers Waheeda SN, Zainal N, Hassan Z, Novikov SV, Akimov AV, Kent AJ Applied Surface Science, 317, 1010, 2014 |
3 |
Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates Goff LE, Powell REL, Kent AJ, Foxon CT, Novikov SV, Webster R, Cherns D Journal of Crystal Growth, 386, 135, 2014 |
4 |
Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy Novikov SV, Powell REL, Staddon CR, Kent AJ, Foxon CT Journal of Crystal Growth, 403, 43, 2014 |
5 |
Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy Lee SC, Ng SS, Abu Hassan H, Hassan Z, Zainal N, Novikov SV, Foxon CT, Kent AJ Materials Chemistry and Physics, 146(1-2), 121, 2014 |
6 |
Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers Novikov SV, Powell REL, Kent AJ, Foxon CT Journal of Crystal Growth, 378, 17, 2013 |
7 |
Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy Novikov SV, Staddon CR, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 350(1), 80, 2012 |
8 |
Plasma-assisted electroepitaxy as a method for the growth of GaN layers Novikov SV, Staddon CR, Kent AJ, Foxon CT Journal of Crystal Growth, 316(1), 51, 2011 |
9 |
Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy Novikov SV, Staddon CR, Powell REL, Akimov AV, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 322(1), 23, 2011 |
10 |
Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals Novikov SV, Staddon CR, Foxon CT, Luckert F, Edwards PR, Martin RW, Kent AJ Journal of Crystal Growth, 323(1), 80, 2011 |